? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 300 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c60a i dm t c = 25 c, pulse width limited by t jm 250 a i ar t c = 25 c60a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 22..130/5..29 n/lb weight 5g ds99247e(12/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 51 a 36 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm hiperfet power mosfet ixfr 102n30p n-channel enhancement mode fast intrinsic diode avalanche rated features l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density v dss = 300 v i d25 =60 a r ds(on) 36 m ? ? ? ? ? t rr 200 ns g = gate d = drain s = source s g d isoplus247 (ixfr) e153432 (electrically isolated back surface) (isolated tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 102n30p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 51 a, pulse test 45 57 s c iss 7500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1150 pf c rss 230 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 51 a 28 ns t d(off) r g = 3.3 ? (external) 130 ns t f 30 ns q g(on) 224 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 51 a 50 nc q gd 110 nc r thjc 0.5 c/w r thcs 0.15 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 102 a i sm repetitive 250 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 200 ns q rm v r = 100 v, v gs = 0 v 0.8 c i rm 7 isoplus247 outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2006 ixys all rights reserved ixfr 102n30p fig. 2. exte nde d output characte ris tics @ 25 o c 0 25 50 75 100 125 150 175 200 225 250 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 100 110 01234 56789 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 00.511.5 22.533.54 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alize d to i d = 51a value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds( on) - normalized i d = 102a i d = 51a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 51a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r ds( on) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. case tem perature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 102n30p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 225 q g - nanocoulombs v g s - volts v ds = 150v i d = 51a i g = 10m a fig. 7. input adm ittance 0 25 50 75 100 125 150 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v gs - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 175 200 i d - amperes g fs - siemens t j = -40oc 25oc 125oc fig. 9. source curre nt vs . source-to-drain voltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe ope rating are a 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10m s 25s
? 2006 ixys all rights reserved ixfr 102n30p fig. 13. m axim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r (th)jc - oc/w
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